Changshin Memory (CXMT) breaks the 9,000 MT/s barrier with DDR5
Changshin Memory (CXMT) breaks the 9,000 MT/s barrier with DDR5 DDR5 from Chinese memory company $CXMT succeeded in overclocking to 9,000MT/s on the AMD X870E platform. Based on the Colorful iGame Shadow II 24GB×2 48GB kit, the effective speed is over 9,014MT/s. CL28 testing was also conducted in a 6,000MT/s environment. CXMT is currently known to produce DDR5 using a 17nm process, and although it lags behind the 10nm process of Samsung Electronics and SK Hynix, it has achieved this level of performance. Just a few years ago, many evaluated that it was difficult for China to catch up with K…
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