Changshin Memory (CXMT) breaks the 9,000 MT/s barrier with DDR5

Korean Alpha EN (@korean_alpha_en), Aug 18, 2026, 06:27 UTC

Changshin Memory (CXMT) breaks the 9,000 MT/s barrier with DDR5 DDR5 from Chinese memory company $CXMT succeeded in overclocking to 9,000MT/s on the AMD X870E platform. Based on the Colorful iGame Shadow II 24GB×2 48GB kit, the effective speed is over 9,014MT/s. CL28 testing was also conducted in a 6,000MT/s environment. CXMT is currently known to produce DDR5 using a 17nm process, and although it lags behind the 10nm process of Samsung Electronics and SK Hynix, it has achieved this level of performance. Just a few years ago, many evaluated that it was difficult for China to catch up with K…

The excerpt is quoted from a public Telegram channel, which owns its text.

Read the original post on Telegram

More posts from Korean Alpha EN · All channels

FixLane Live vulnerabilities with ready fix prompts